Lattice damage and nanohardness in 6H-SiC implanted with multiple-energy Xe ions
文献类型：会议论文
| 作者 | Jia, X. J.1,2; Jin, Y. F.2; Li, J. Y.2; Song, Y.2 ; Xu, C. L.1,2; Zhang, C. H.2; Li, J. J.1,2
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| 出版日期 | 2012-09 |
| 关键词 | 6H-SiC Xe ions Irradiation HRXRD Nanoindentation |
| 卷号 | 286 |
| DOI | 10.1016/j.nimb.2011.11.034 |
| 页码 | 124-128 |
| 英文摘要 | Specimens of 6H-SiC were implanted with Xe ions with multiple kinetic energies at room temperature to obtain nearly uniform Xe concentrations of 7.5, 30, 150 at. ppm, respectively, and were subsequently thermally annealed under high vacuum. The lattice damage and nanohardness of specimens were studied with high resolution X-ray diffraction spectrometry and nanoindentation measurements. In the low dose specimen (7.5 at. ppm), the occurrence of a plateau (with sub-peaks) at low angle side of the SiC (0 0 0 1 2) peak suggests a strain gradient in the direction normal to the specimen surface. Upon subsequent thermal annealing the strain relaxes gradually. The relaxation activation energy of the strain was estimated with Arrhenius law. For the specimens implanted to 30 and 150 at. ppm Xe, the disappearance of the plateau or peak indicates that the implanted region has been amorphized. However, a satellite peak near the main peak reappears after the thermal annealing. In addition, the main peak broadens toward high angle side after the annealing as the result of a shrinkage of crystal lattice. The nanohardness value of the specimen implanted to 7.5 at. ppm exceeds that of virgin SiC, whereas it is opposite for the case of 30 and 150 at. ppm implantation due to the formation of amorphous regions. Changes of nanohardness with thermal annealing temperature were studied. Underlying mechanisms were discussed. (C) 2011 Elsevier B.V. All rights reserved. |
| 会议录 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
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| 会议录出版者 | ELSEVIER SCIENCE BV |
| 会议录出版地 | PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
| 语种 | 英语 |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| WOS记录号 | WOS:000309488300024 |
| 源URL | [http://119.78.100.186/handle/113462/57820]  |
| 专题 | 近代物理研究所_材料研究中心 |
| 通讯作者 | Zhang, C. H. |
| 作者单位 | 1.Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Jia, X. J.,Jin, Y. F.,Li, J. Y.,et al. Lattice damage and nanohardness in 6H-SiC implanted with multiple-energy Xe ions[C]. 见:. |
入库方式： OAI收割
来源：近代物理研究所
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