Photoluminescence of inert-gas ion implanted sapphire after 230-MeV Pb ion irradiation
文献类型：会议论文
| 作者 | Zhang, CH; Wang, ZG; Zhao, ZM; Sun, YM; Duan, JL; Song, Y
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| 出版日期 | 2006-04 |
| 关键词 | ion implantation heavy ion irradiation Al2O3 PL spectra |
| 卷号 | 245 |
| 期号 | 1 |
| DOI | 10.1016/j.nimb.2005.11.134 |
| 页码 | 210-213 |
| 英文摘要 | In the present work the photoluminescence (PL) character of sapphire implanted with 110-keV He, Ar or Ne ions and subsequently irradiated with 230-MeV Pb was studied. The implantation was performed at 320 and 600 K using fluences from 5.0 x 10(16) to 2.0 x 10(17) ions/cm(2). The Pb ion irradiation was carried out at 320 K. The obtained PL spectra showed peaks at 375, 413 and 450 nm with maximum intensity at an implantation fluence of 5.0 x 10(16) ions/cm(2) and a new peak at 390 nm appeared in the He-implanted and subsequently Pb-irradiated samples. Infrared spectra showed a broadening of the absorption band between 460 and 510 nm indicating strongly damaged regions formed in the Al2O3 samples. A possible PL mechanism is discussed. (c) 2005 Elsevier B.V. All rights reserved. |
| 会议录 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
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| 会议录出版者 | ELSEVIER SCIENCE BV |
| 会议录出版地 | PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
| 语种 | 英语 |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| WOS记录号 | WOS:000236288500044 |
| 源URL | [http://119.78.100.186/handle/113462/57961]  |
| 专题 | 近代物理研究所_材料研究中心 |
| 通讯作者 | Song, Y |
| 作者单位 | Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, CH,Wang, ZG,Zhao, ZM,et al. Photoluminescence of inert-gas ion implanted sapphire after 230-MeV Pb ion irradiation[C]. 见:. |
入库方式： OAI收割
来源：近代物理研究所
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