Modification of C-doped a-SiO2 after Swift Heavy-Ion Irradiation
文献类型：会议论文
| 作者 | Yao, Cun-Feng ; Wang, Zhi-Guang; Liu, Cun-Bao; Zang, Hang; Wei, Kong-Fang
|
| 出版日期 | 2009-12 |
| 关键词 | Swift heavy-ion irradiation Ion implantation C-doped a-SiO2 Phase change PL spectra |
| 卷号 | 55 |
| 期号 | 6 |
| DOI | 10.3938/jkps.55.2705 |
| 页码 | 2705-2707 |
| 英文摘要 | Amorphous SiO2 (a-SiO2) thin films were thermally grown on single-crystalline silicon. These a-SiO2/Si samples were first implanted (C-doped) with 100-keV carbon ion at room temperature (RT) at a dose of 5.0 x 10(17) C-ions/cm(2) and were then irradiated at RT by using 853 MeV Pb ions at closes of 5.0 x 10(11), 1.0 x 10(12), 2.0 x 10(12) and 5.0 x 10(12) Pb-ions/cm(2), respectively. The microstructures and the photoluminescence (PL) properties of these samples induced by Pb ions were investigated using fluorescence spectroscopy and transmission electron microscopy. We found that high-energy Pb-ion irradiation could induce the formation of a new phase and a change in the PL property of C-doped a-SiO2/Si samples. The relationship between the observed phenomena and the ion irradiation parameters is briefly discussed. |
| 会议录 | JOURNAL OF THE KOREAN PHYSICAL SOCIETY
 |
| 会议录出版者 | KOREAN PHYSICAL SOC |
| 会议录出版地 | 635-4, YUKSAM-DONG, KANGNAM-KU, SEOUL 135-703, SOUTH KOREA |
| 语种 | 英语 |
| WOS研究方向 | Physics |
| WOS记录号 | WOS:000272877800021 |
| 源URL | [http://119.78.100.186/handle/113462/58026]  |
| 专题 | 近代物理研究所_先进核能材料研究室（ADS） |
| 通讯作者 | Wang, Zhi-Guang |
| 作者单位 | Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yao, Cun-Feng,Wang, Zhi-Guang,Liu, Cun-Bao,et al. Modification of C-doped a-SiO2 after Swift Heavy-Ion Irradiation[C]. 见:. |
入库方式： OAI收割
来源：近代物理研究所
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