Structures and optical properties of Kr23+ and Ne8+-irradiated GaN epi-layers
文献类型：会议论文
| 作者 | Song, Y. ; Jin, Y. F.; Li, J. Y.; Meng, Y. C.; Xu, C. L.; Yang, Y. T.; Gou, J.; Jia, X. J.; Zhang, C. H.; Zhang, L. Q.
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| 出版日期 | 2013-07-15 |
| 关键词 | GaN Ion irradiation X-ray diffraction UV-visible transmission spectrum Raman scattering spectrum |
| 卷号 | 307 |
| DOI | 10.1016/j.nimb.2012.12.101 |
| 页码 | 60-64 |
| 英文摘要 | Epitaxial GaN layers grown by MOCVD on c-plane sapphire substrates were irradiated with 5.3 MeV Kr23+ and 2.3 MeV Ne8+ ions to various fluences. The pristine and the irradiated GaN samples were characterized using high resolution X-ray diffraction (HRXRD), UV-visible transmittance spectrum and Raman scattering spectrum analysis. The HRXRD results show an obvious increase in the FWHM and a decrease in the intensity of the GaN (0002) peak with increasing ion fluences. Meanwhile the UV-visible transmittance spectra show a decrease in the band gap value after irradiation. The Raman scattering spectrum shows that new Raman bands around 300 and 670 cm(-1) appear with increasing ion fluences. The new Raman bands can be ascribed to disorder-activated Raman scattering (DARS) from the highest acoustic-phonon branch and the optical-phonon branch at the brillouin zone boundaries, respectively. (C) 2013 Elsevier B.V. All rights reserved. |
| 会议录 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
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| 会议录出版者 | ELSEVIER SCIENCE BV |
| 会议录出版地 | PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
| 语种 | 英语 |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| WOS记录号 | WOS:000321722200015 |
| 源URL | [http://119.78.100.186/handle/113462/58109]  |
| 专题 | 近代物理研究所_能源材料研究组 近代物理研究所_材料研究中心 |
| 通讯作者 | Zhang, C. H. |
| 作者单位 | Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Song, Y.,Jin, Y. F.,Li, J. Y.,et al. Structures and optical properties of Kr23+ and Ne8+-irradiated GaN epi-layers[C]. 见:. |
入库方式： OAI收割
来源：近代物理研究所
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