中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Structures and optical properties of Kr23+ and Ne8+-irradiated GaN epi-layers

文献类型:会议论文

作者Li, J. Y.; Jin, Y. F.; Zhang, L. Q.; Zhang, C. H.; Jia, X. J.; Gou, J.; Yang, Y. T.; Song, Y.; Xu, C. L.; Meng, Y. C.
出版日期2013-07-15
关键词GaN Ion irradiation X-ray diffraction UV-visible transmission spectrum Raman scattering spectrum
卷号307
DOI10.1016/j.nimb.2012.12.101
页码60-64
英文摘要Epitaxial GaN layers grown by MOCVD on c-plane sapphire substrates were irradiated with 5.3 MeV Kr23+ and 2.3 MeV Ne8+ ions to various fluences. The pristine and the irradiated GaN samples were characterized using high resolution X-ray diffraction (HRXRD), UV-visible transmittance spectrum and Raman scattering spectrum analysis. The HRXRD results show an obvious increase in the FWHM and a decrease in the intensity of the GaN (0002) peak with increasing ion fluences. Meanwhile the UV-visible transmittance spectra show a decrease in the band gap value after irradiation. The Raman scattering spectrum shows that new Raman bands around 300 and 670 cm(-1) appear with increasing ion fluences. The new Raman bands can be ascribed to disorder-activated Raman scattering (DARS) from the highest acoustic-phonon branch and the optical-phonon branch at the brillouin zone boundaries, respectively. (C) 2013 Elsevier B.V. All rights reserved.
会议录NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
会议录出版者ELSEVIER SCIENCE BV
会议录出版地PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
语种英语
WOS研究方向Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
WOS记录号WOS:000321722200015
源URL[http://119.78.100.186/handle/113462/58110]  
专题近代物理研究所_能源材料研究组
近代物理研究所_材料研究中心
通讯作者Zhang, C. H.
作者单位Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式
GB/T 7714
Li, J. Y.,Jin, Y. F.,Zhang, L. Q.,et al. Structures and optical properties of Kr23+ and Ne8+-irradiated GaN epi-layers[C]. 见:.

入库方式: OAI收割

来源:近代物理研究所

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