Photoluminescence character of Xe ion irradiated sapphire
文献类型：会议论文
| 作者 | Jie, Gou1; Yan-bin, Sheng1 ; Er-qing, Xie2; Chong-hong, Zhang1; Zhi-guang, Wang1; Li-hong, Zhou1; Yi-Zhong, Ma1; Cun-feng, Yao1; Hang, Zang1; Yin, Song1,2
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| 出版日期 | 2008-06 |
| 关键词 | ion implantation ion irradiation Al2O3 PL spectra |
| 卷号 | 266 |
| 期号 | 12-13 |
| DOI | 10.1016/j.nimb.2008.03.210 |
| 页码 | 2998-3001 |
| 英文摘要 | In the present work the photoluminescence (PL) character of sapphire implanted with 180 keV Xe and irradiated with 308 MeV Xe ions was studied. The virgin, implanted and irradiated samples were investigated by PL and Fourier transform infrared (FTIR) spectra measurements. The obtained PL spectra showed the maximum emission bands at 2.75, 3.0 and 3.26 eV for the implanted fluence of 1.0 x 10(15) ions/cm(2) and at 2.4 and 3.47 eV for the irradiated fluence of 1.0 x 10(13) ions/cm(2). The FTIR spectra showed a broaden absorption band between 460 and 630 cm(-1), indicating that strong damaged region formed in Al2O3. (C) 2008 Elsevier B.V. All rights reserved. |
| 会议录 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
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| 会议录出版者 | ELSEVIER SCIENCE BV |
| 会议录出版地 | PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
| 语种 | 英语 |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| WOS记录号 | WOS:000257721300074 |
| 源URL | [http://119.78.100.186/handle/113462/58234]  |
| 专题 | 近代物理研究所_材料研究中心 近代物理研究所_先进核能材料研究室（ADS） |
| 通讯作者 | Yin, Song |
| 作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Jie, Gou,Yan-bin, Sheng,Er-qing, Xie,et al. Photoluminescence character of Xe ion irradiated sapphire[C]. 见:. |
入库方式： OAI收割
来源：近代物理研究所
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