Supply Voltage Dependence of Single Event Upset Sensitivity in Diverse SRAM Devices
文献类型：会议论文
| 作者 | Su, Hong2 ; Zhang, Zhangang1; Lei, Zhifeng1; En, Yunfei1; Huang, Yun1; Ji, CY; En, YF; Liu, Jie2; Sun, Youmei2; Hou, Mingdong2
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| 出版日期 | 2014 |
| 关键词 | single event upset supply voltage static random access memeory critical charge |
| 页码 | 114-119 |
| 英文摘要 | Experimental evidences are presented showing the variety of supply voltage dependence of single event upset (SEU) sensitivity in diverse SRAM devices. Devices under test (DUTs) from Alliance Memory, ISSI and IDT companies with different technologies were irradiated by several kinds of heavy ions at Heavy ion Research Facility in Lanzhou (HIRFL) cyclotrons. For the Alliance 256 kb SRAM device, SEU cross section increases by more than one order of magnitude as supply voltage decreases from 5.0 V to 3.0 V. SEU data of Alliance 64 kb SRAM also exhibits significant supply voltage dependence. The reduction of critical charge is the predominant factor worsening the device performance. While for the Alliance 8 Mb, ISSI 2 Mb and IDT 256 kb SRAM devices, no obvious trend was observed, which is attributed to the negligible net contribution of competing mechanisms. Those results suggest that the worst-case supply voltage for evaluation of SEU sensitivity depends on the test devices. |
| 会议录 | PROCEEDINGS OF 2014 10TH INTERNATIONAL CONFERENCE ON RELIABILITY, MAINTAINABILITY AND SAFETY (ICRMS), VOLS I AND II
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| 会议录出版者 | IEEE |
| 会议录出版地 | 345 E 47TH ST, NEW YORK, NY 10017 USA |
| 语种 | 英语 |
| 资助项目 | China Postdoctoral Science Foundation[2014M552170] |
| WOS研究方向 | Engineering |
| WOS记录号 | WOS:000411466400015 |
| 源URL | [http://119.78.100.186/handle/113462/58463]  |
| 专题 | 近代物理研究所_材料研究中心 |
| 通讯作者 | Zhang, Zhangang |
| 作者单位 | 1.Sci & Technol Reliabil Phys & Applicat Elect Comp, Guangzhou, Guangdong, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Mat Res Ctr, Lanzhou, Gansu, Peoples R China |
| 推荐引用方式 GB/T 7714 | Su, Hong,Zhang, Zhangang,Lei, Zhifeng,et al. Supply Voltage Dependence of Single Event Upset Sensitivity in Diverse SRAM Devices[C]. 见:. |
入库方式： OAI收割
来源：近代物理研究所
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