A HRXRD and nano-indentation study on Ne-implanted 6H-SiC
文献类型：会议论文
| 作者 | Li, J. J.1,2; Zhang, L. Q.2; Yang, Y. T.1,2; Song, Y.2 ; Jia, X. J.1,2; Li, J. Y.2; Chen, K. Q.2; Xu, C. L.1,2; Zhang, C. H.2
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| 出版日期 | 2012-09 |
| 关键词 | 6H-SiC Irradiation Neon ions HRXRD Nano-indentation |
| 卷号 | 286 |
| DOI | 10.1016/j.nimb.2012.01.009 |
| 页码 | 129-133 |
| 英文摘要 | Specimens of 6H-SiC single crystal were irradiated at room temperature with 2.3 MeV neon ions to three successively increasing fluences of 2 x 10(14), 1.1 x 10(15) and 3.8 x 10(15) ions/cm(2) and then annealed at room temperature, 500, 700 and 1000 degrees C, respectively. The strain in the specimens was investigated with a high resolution XRD spectrometer with an omega-20 scanning. And the mechanical properties were investigated with the nano-indentation in the continuous stiffness measurement (CSM) mode with a diamond Berkovich indenter. The XRD curves of specimens after irradiation show the diffraction peaks arising at lower angles aside of the main Bragg peak Theta(Bragg), indicating that a positive strain is produced in the implanted layer. In the as-implanted specimens, the strain increases with the increase of the ion fluence or energy deposition. Recovery of the strain occurs on subsequent thermal annealing treatment and two stages of defects evolution process are displayed. An interpretation of defects migration, annihilation and evolution is given to explain the strain variations of the specimens after annealing. The nano-indentation measurements show that the hardness in as-implanted specimens first increases with the increase of the ion fluence, and a degradation of hardness occurs when the ion fluence exceeds a threshold. On the subsequent annealing, the hardness variations are regarded to be a combined effect of the covalent bonding and the pinning effect of defect clusters. (C) 2012 Elsevier B.V. All rights reserved. |
| 会议录 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
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| 会议录出版者 | ELSEVIER SCIENCE BV |
| 会议录出版地 | PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
| 语种 | 英语 |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| WOS记录号 | WOS:000309488300025 |
| 源URL | [http://119.78.100.186/handle/113462/58475]  |
| 专题 | 近代物理研究所_材料研究中心 |
| 通讯作者 | Zhang, C. H. |
| 作者单位 | 1.Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, J. J.,Zhang, L. Q.,Yang, Y. T.,et al. A HRXRD and nano-indentation study on Ne-implanted 6H-SiC[C]. 见:. |
入库方式： OAI收割
来源：近代物理研究所
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