Lattice disorder produced in GaN by He-ion implantation
文献类型：会议论文
| 作者 | Luo, Peng2; Sheng, Yanbin2 ; Zhang, Hongpeng2; Zhang, Li4; Fang, Xuesong1,2; Zhao, Sixiang2; Jin, Jin2; Huang, Yuxuan2; Liu, Chao2; Tai, Pengfei2
|
| 出版日期 | 2017-09 |
| 关键词 | He-ion implantation GaN Microstructure Lattice disorder Lattice strain |
| 卷号 | 406 |
| DOI | 10.1016/j.nimb.2016.12.039 |
| 页码 | 543-547 |
| 英文摘要 | The lattice disorders induced by He-ion implantation in GaN epitaxial films to fluences of 2 x 10(16), 5 x 10(16) and 1 x 10(17) cm(-2) at room temperature (RT) have been investigated by a combination of Raman spectroscopy, high-resolution X-ray diffraction (HRXRD), nano-indentation, and transmission electron microscopy (TEM). The experimental results present that Raman intensity decreases with increasing fluence. Raman frequency "red shift" occurs after He-ion implantation. Strain increases with increasing fluence. The hardness of the highly damaged layer increases monotonically with increasing fluence. Microstructural results demonstrate that the width of the damage band and the number density of observed dislocation loops increases with increasing fluence. High-resolution TEM images exhibit that He-ion implantation lead to the formation of planar defects and most of the lattice defects are of interstitial-type basal loops. The relationships of Raman intensity, lattice strain, swelling and hardness with He-implantation-induced lattice disorders are discussed. (C) 2016 Elsevier B.V. All rights reserved. |
| 会议录 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
 |
| 会议录出版者 | ELSEVIER SCIENCE BV |
| 会议录出版地 | PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
| 语种 | 英语 |
| 资助项目 | National Natural Science Foundation of China[11475229] ; National Natural Science Foundation of China[91426301] ; National Natural Science Foundation of China[11305081] |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| WOS记录号 | WOS:000407659500028 |
| 源URL | [http://119.78.100.186/handle/113462/58564]  |
| 专题 | 近代物理研究所_先进核能材料研究室（ADS） |
| 通讯作者 | Li, Bingsheng |
| 作者单位 | 1.China Grad Univ Chinese Acad Sci, Beijing 100049, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China 3.Lanzhou Univ, Sch Nucl Sci & Technol, Lanzhou 730000, Gansu, Peoples R China 4.Lanzhou Univ Technol, Sch Sci, Dept Phys, Lanzhou 730050, Gansu, Peoples R China |
| 推荐引用方式 GB/T 7714 | Luo, Peng,Sheng, Yanbin,Zhang, Hongpeng,et al. Lattice disorder produced in GaN by He-ion implantation[C]. 见:. |
入库方式： OAI收割
来源：近代物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。