Influences of total ionizing dose on single event effect sensitivity in floating gate cells
文献类型：期刊论文
| 作者 | Zhao, Pei-Xiong2,3 ; Liu, Tian-Qi1,2,3; Ye, Bing2; Luo, Jie1,2,3; Sun, You-Mei2; Hou, Ming-Dong2; Yin, Ya-Nan2,3; Liu, Jie2; Ji, Qing-Gang2,3
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| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2018-08-01 |
| 卷号 | 27期号:8页码:086103 |
| 关键词 | flash memories heavy ions synergistic effect total ionizing dose |
| ISSN号 | 1674-1056 |
| DOI | 10.1088/1674-1056/27/8/086103 |
| 英文摘要 | The influences of total ionizing dose (TID) on the single event effect (SEE) sensitivity of 34-nm and 25-nm NAND flash memories are investigated in this paper. The increase in the cross section of heavy-ion single event upset (SEU) in memories that have ever been exposed to TID is observed, which is attributed to the combination of the threshold voltage shifts induced by gamma-rays and heavy ions. Retention errors in floating gate (FG) cells after heavy ion irradiation are observed. Moreover, the cross section of retention error increases if the memory has ever been exposed to TID. This effect is more evident at a low linear energy transfer (LET) value. The underlying mechanism is identified as the combination of the defects induced by gamma-rays and heavy ions, which increases the possibility to constitute a multi-trap assisted tunneling (m-TAT) path across the tunnel oxide. |
| WOS关键词 | FLASH MEMORIES ; LEAKAGE CURRENT ; HEAVY-IONS ; RETENTION ; EXPOSURE ; SPACE |
| 资助项目 | National Natural Science Foundation of China[11690041] ; National Natural Science Foundation of China[11675233] ; National Natural Science Foundation of China[U1532261] ; National Natural Science Foundation of China[11505243] |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000442029100003 |
| 出版者 | IOP PUBLISHING LTD |
| 资助机构 | National Natural Science Foundation of China |
| 源URL | [http://119.78.100.186/handle/113462/59265]  |
| 专题 | 近代物理研究所_材料研究中心 |
| 通讯作者 | Liu, Jie |
| 作者单位 | 1.Lanzhou Univ, Lanzhou 730000, Gansu, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao, Pei-Xiong,Liu, Tian-Qi,Ye, Bing,et al. Influences of total ionizing dose on single event effect sensitivity in floating gate cells[J]. CHINESE PHYSICS B,2018,27(8):086103. |
| APA | Zhao, Pei-Xiong.,Liu, Tian-Qi.,Ye, Bing.,Luo, Jie.,Sun, You-Mei.,...&Ji, Qing-Gang.(2018).Influences of total ionizing dose on single event effect sensitivity in floating gate cells.CHINESE PHYSICS B,27(8),086103. |
| MLA | Zhao, Pei-Xiong,et al."Influences of total ionizing dose on single event effect sensitivity in floating gate cells".CHINESE PHYSICS B 27.8(2018):086103. |
入库方式： OAI收割
来源：近代物理研究所
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