Investigation of flux dependent sensitivity on single event effect in memory devices
文献类型：期刊论文
| 作者 | Liu, Tian-qi1; Xi, Kai1; Hou, Ming-dong1; Sun, You-mei1 ; Duan, Jing-lai1; Yao, Hui-jun1; Wang, Tie-shan3; Luo, Jie1,2,3; Li, Dong-qing1; Liu, Jie1
|
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2018-07 |
| 卷号 | 27期号:7页码:076101 |
| 关键词 | ion flux single event effect GEANT4 simulation memory device |
| ISSN号 | 1674-1056 |
| DOI | 10.1088/1674-1056/27/7/076101 |
| 英文摘要 | Heavy-ion flux is an important experimental parameter in the ground based single event tests. The flux impact on a single event effect in different memory devices is analyzed by using GEANT4 and TCAD simulation methods. The transient radial track profile depends not only on the linear energy transfer (LET) of the incident ion, but also on the mass and energy of the ion. For the ions with the energies at the Bragg peaks, the radial charge distribution is wider when the ion LET is larger. The results extracted from the GEANT4 and TCAD simulations, together with detailed analysis of the device structure, are presented to demonstrate phenomena observed in the flux related experiment. The analysis shows that the flux effect conclusions drawn from the experiment are intrinsically connected and all indicate the mechanism that the flux effect stems from multiple ion-induced pulses functioning together and relies exquisitely on the specific response of the device. |
| WOS关键词 | ENERGY ELECTROMAGNETIC MODELS ; GEANT4 PHYSICS PROCESSES ; UPSET ; SILICON ; SPACE ; SRAM ; ICS |
| 资助项目 | National Natural Science Foundation of China[U1532261] ; National Natural Science Foundation of China[11690041] ; National Natural Science Foundation of China[11675233] |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000439125900001 |
| 出版者 | IOP PUBLISHING LTD |
| 源URL | [http://119.78.100.186/handle/113462/59694]  |
| 专题 | 近代物理研究所_材料研究中心 |
| 通讯作者 | Liu, Jie |
| 作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.Lanzhou Univ, Sch Nucl Sci & Technol, Lanzhou 730000, Gansu, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, Tian-qi,Xi, Kai,Hou, Ming-dong,et al. Investigation of flux dependent sensitivity on single event effect in memory devices[J]. CHINESE PHYSICS B,2018,27(7):076101. |
| APA | Liu, Tian-qi.,Xi, Kai.,Hou, Ming-dong.,Sun, You-mei.,Duan, Jing-lai.,...&Ye, Bing.(2018).Investigation of flux dependent sensitivity on single event effect in memory devices.CHINESE PHYSICS B,27(7),076101. |
| MLA | Liu, Tian-qi,et al."Investigation of flux dependent sensitivity on single event effect in memory devices".CHINESE PHYSICS B 27.7(2018):076101. |
入库方式： OAI收割
来源：近代物理研究所
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