Carrier-transport-path-induced switching parameter fluctuation in oxide-based resistive switching memory
文献类型：期刊论文
| 作者 | Sun PX(孙鹏霄); Lu ND(卢年端) ; Liu M(刘明); Lv HB(吕杭炳); Wang M(王明)
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| 刊名 | Materials Research Express
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| 出版日期 | 2016-01-14 |
| 文献子类 | 期刊论文 |
| 英文摘要 | Based on the activation energy of carrier transport from the first-principles calculations, we present a physical model. This proposed model is considering the macroscopic fluctuating I–Vcurve and material microstructure to analyze the characteristics of carrier transport and the origin of switching parameter fluctuations. The proposed model may specially identify the defect energy level and quantify the distribution of the switching parameter. |
| 源URL | [http://159.226.55.106/handle/172511/16244]  |
| 专题 | 微电子研究所_回溯数据库（1992-2008年） |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Sun PX,Lu ND,Liu M,et al. Carrier-transport-path-induced switching parameter fluctuation in oxide-based resistive switching memory[J]. Materials Research Express,2016. |
| APA | Sun PX,Lu ND,Liu M,Lv HB,&Wang M.(2016).Carrier-transport-path-induced switching parameter fluctuation in oxide-based resistive switching memory.Materials Research Express. |
| MLA | Sun PX,et al."Carrier-transport-path-induced switching parameter fluctuation in oxide-based resistive switching memory".Materials Research Express (2016). |
入库方式： OAI收割
来源：微电子研究所
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