A 65nm 1Gb NOR Floating-gate Flash Memory with Less than 50ns Access time
文献类型:期刊论文
作者 | Liu M(刘明)![]() ![]() |
刊名 | Chinese Science bulletin
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出版日期 | 2014-08-01 |
期号 | 29页码:3935-3942 |
英文摘要 | This paper presents a 65nm 1Gb NOR-type Floating-gate Flash memory, in which the cell device and chip circuit are developed and optimized. In order to solve the speed problem of giga-level NOR Flash in the deep sub-micron process, the models of long bit-line and word-line are first given, by which the capacitive and resistive loads could be estimated. Based on that, the read path and key modules are optimized to enhance the chip access property and reliability. |
公开日期 | 2015-04-13 |
源URL | [http://10.10.10.126/handle/311049/12468] ![]() |
专题 | 微电子研究所_微电子器件与集成技术重点实验室 |
通讯作者 | Liu M(刘明) |
作者单位 | 中国科学院微电子研究所 |
推荐引用方式 GB/T 7714 | Liu M,Wang Y,Huo ZL. A 65nm 1Gb NOR Floating-gate Flash Memory with Less than 50ns Access time[J]. Chinese Science bulletin,2014(29):3935-3942. |
APA | Liu M,Wang Y,&Huo ZL.(2014).A 65nm 1Gb NOR Floating-gate Flash Memory with Less than 50ns Access time.Chinese Science bulletin(29),3935-3942. |
MLA | Liu M,et al."A 65nm 1Gb NOR Floating-gate Flash Memory with Less than 50ns Access time".Chinese Science bulletin .29(2014):3935-3942. |
入库方式: OAI收割
来源:微电子研究所
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