中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
A 65nm 1Gb NOR Floating-gate Flash Memory with Less than 50ns Access time

文献类型:期刊论文

作者Liu M(刘明); Wang Y(王瑜); Huo ZL(霍宗亮)
刊名Chinese Science bulletin
出版日期2014-08-01
期号29页码:3935-3942
英文摘要

This paper presents a 65nm 1Gb NOR-type Floating-gate Flash memory, in which the cell device and chip circuit are developed and optimized. In order to solve the speed problem of giga-level NOR Flash in the deep sub-micron process, the models of long bit-line and word-line are first given, by which the capacitive and resistive loads could be estimated. Based on that, the read path and key modules are optimized to enhance the chip access property and reliability.

公开日期2015-04-13
源URL[http://10.10.10.126/handle/311049/12468]  
专题微电子研究所_微电子器件与集成技术重点实验室
通讯作者Liu M(刘明)
作者单位中国科学院微电子研究所
推荐引用方式
GB/T 7714
Liu M,Wang Y,Huo ZL. A 65nm 1Gb NOR Floating-gate Flash Memory with Less than 50ns Access time[J]. Chinese Science bulletin,2014(29):3935-3942.
APA Liu M,Wang Y,&Huo ZL.(2014).A 65nm 1Gb NOR Floating-gate Flash Memory with Less than 50ns Access time.Chinese Science bulletin(29),3935-3942.
MLA Liu M,et al."A 65nm 1Gb NOR Floating-gate Flash Memory with Less than 50ns Access time".Chinese Science bulletin .29(2014):3935-3942.

入库方式: OAI收割

来源:微电子研究所

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