Investigation on interface related charge trap and loss characteristics of high-k based trapping structures by electrostatic force microscopy
文献类型：期刊论文
| 作者 | 朱晨昕,许中广,霍宗亮 |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2011-11-28 |
| 公开日期 | 2015-09-22 |
| 源URL | [http://10.10.10.126/handle/311049/13528]  |
| 专题 | 微电子研究所_微电子器件与集成技术重点实验室 |
| 推荐引用方式 GB/T 7714 | 朱晨昕,许中广,霍宗亮. Investigation on interface related charge trap and loss characteristics of high-k based trapping structures by electrostatic force microscopy[J]. APPLIED PHYSICS LETTERS,2011. |
| APA | 朱晨昕,许中广,霍宗亮.(2011).Investigation on interface related charge trap and loss characteristics of high-k based trapping structures by electrostatic force microscopy.APPLIED PHYSICS LETTERS. |
| MLA | 朱晨昕,许中广,霍宗亮."Investigation on interface related charge trap and loss characteristics of high-k based trapping structures by electrostatic force microscopy".APPLIED PHYSICS LETTERS (2011). |
入库方式： OAI收割
来源：微电子研究所
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