中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Conduction mechanism of a TaOx-based selector and its application in crossbar memory arrays

文献类型:期刊论文

作者Wang M(王明); Zhou JT(周剑韬); Yang YC(杨玉超); Siddharth Gaba; Liu M(刘明); Wei D.lu
刊名Nanoscale
出版日期2015-02-06
公开日期2016-05-24
源URL[http://10.10.10.126/handle/311049/14905]  
专题微电子研究所_微电子器件与集成技术重点实验室
作者单位中国科学院微电子研究所
推荐引用方式
GB/T 7714
Wang M,Zhou JT,Yang YC,et al. Conduction mechanism of a TaOx-based selector and its application in crossbar memory arrays[J]. Nanoscale,2015.
APA Wang M,Zhou JT,Yang YC,Siddharth Gaba,Liu M,&Wei D.lu.(2015).Conduction mechanism of a TaOx-based selector and its application in crossbar memory arrays.Nanoscale.
MLA Wang M,et al."Conduction mechanism of a TaOx-based selector and its application in crossbar memory arrays".Nanoscale (2015).

入库方式: OAI收割

来源:微电子研究所

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