A Physical Model for the Statistics of the Set Switching Time of Resistive RAM Measured with the Width-Adjusting Pulse Operation Method
文献类型：期刊论文
| 作者 | Zhang MY(张美芸); Yu ZA(余兆安) ; Li Y(李阳); Xu DL(许定林); Lv HB(吕杭炳); Liu Q(刘琦); Liu M(刘明); Wang GM(王国明); Long SB(龙世兵)
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| 刊名 | IEEE Electron Device Letters
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| 出版日期 | 2015-10-26 |
| 公开日期 | 2016-05-24 |
| 源URL | [http://10.10.10.126/handle/311049/14917]  |
| 专题 | 微电子研究所_微电子器件与集成技术重点实验室 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Zhang MY,Yu ZA,Li Y,et al. A Physical Model for the Statistics of the Set Switching Time of Resistive RAM Measured with the Width-Adjusting Pulse Operation Method[J]. IEEE Electron Device Letters,2015. |
| APA | Zhang MY.,Yu ZA.,Li Y.,Xu DL.,Lv HB.,...&Long SB.(2015).A Physical Model for the Statistics of the Set Switching Time of Resistive RAM Measured with the Width-Adjusting Pulse Operation Method.IEEE Electron Device Letters. |
| MLA | Zhang MY,et al."A Physical Model for the Statistics of the Set Switching Time of Resistive RAM Measured with the Width-Adjusting Pulse Operation Method".IEEE Electron Device Letters (2015). |
入库方式： OAI收割
来源：微电子研究所
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