Improving resistance uniformity and endurance of resistive switching memory by accurately controlling the stress time of pulse program operation
文献类型：期刊论文
| 作者 | Xu DL(许定林); Wang GM(王国明); Long SB(龙世兵) ; Yu ZA(余兆安); Zhang MY(张美芸); Ye TC(叶甜春); Li Y(李阳); Lv HB(吕杭炳); Liu Q(刘琦); Wang M(王明)
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| 刊名 | Appl. Phys. Lett.
 |
| 出版日期 | 2015-03-03 |
| 语种 | 英语 |
| 公开日期 | 2016-05-24 |
| 源URL | [http://10.10.10.126/handle/311049/14919]  |
| 专题 | 微电子研究所_微电子器件与集成技术重点实验室 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Xu DL,Wang GM,Long SB,et al. Improving resistance uniformity and endurance of resistive switching memory by accurately controlling the stress time of pulse program operation[J]. Appl. Phys. Lett.,2015. |
| APA | Xu DL.,Wang GM.,Long SB.,Yu ZA.,Zhang MY.,...&Liu M.(2015).Improving resistance uniformity and endurance of resistive switching memory by accurately controlling the stress time of pulse program operation.Appl. Phys. Lett.. |
| MLA | Xu DL,et al."Improving resistance uniformity and endurance of resistive switching memory by accurately controlling the stress time of pulse program operation".Appl. Phys. Lett. (2015). |
入库方式： OAI收割
来源：微电子研究所
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