Impact of program/erase operation on the performances of oxide-based resistive switching memory
文献类型：期刊论文
| 作者 | Wang GM(王国明); Long SB(龙世兵) ; Yu ZA(余兆安); Zhang MY(张美芸); Li Y(李阳); Xu DL(许定林); Lv HB(吕杭炳); Liu Q(刘琦); Yan XB(闫小兵); Wang M(王明)
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| 刊名 | Nanoscale Research Letters
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| 出版日期 | 2015-02-05 |
| 公开日期 | 2016-05-24 |
| 源URL | [http://10.10.10.126/handle/311049/14921]  |
| 专题 | 微电子研究所_微电子器件与集成技术重点实验室 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Wang GM,Long SB,Yu ZA,et al. Impact of program/erase operation on the performances of oxide-based resistive switching memory[J]. Nanoscale Research Letters,2015. |
| APA | Wang GM.,Long SB.,Yu ZA.,Zhang MY.,Li Y.,...&Liu M.(2015).Impact of program/erase operation on the performances of oxide-based resistive switching memory.Nanoscale Research Letters. |
| MLA | Wang GM,et al."Impact of program/erase operation on the performances of oxide-based resistive switching memory".Nanoscale Research Letters (2015). |
入库方式： OAI收割
来源：微电子研究所
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