Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory
文献类型：期刊论文
| 作者 | Liu HT(刘红涛); Liu RY(刘若愚); Liu Q(刘琦) ; Sun HT(孙海涛); Long SB(龙世兵); Li L(李泠); Liu M(刘明); Lv HB(吕杭炳); Xu XX(许晓欣)
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| 刊名 | SCIENTIFIC REPORTS
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| 出版日期 | 2015-01-14 |
| 公开日期 | 2016-05-24 |
| 源URL | [http://10.10.10.126/handle/311049/14929]  |
| 专题 | 微电子研究所_微电子器件与集成技术重点实验室 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Liu HT,Liu RY,Liu Q,et al. Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory[J]. SCIENTIFIC REPORTS,2015. |
| APA | Liu HT.,Liu RY.,Liu Q.,Sun HT.,Long SB.,...&Xu XX.(2015).Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory.SCIENTIFIC REPORTS. |
| MLA | Liu HT,et al."Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory".SCIENTIFIC REPORTS (2015). |
入库方式： OAI收割
来源：微电子研究所
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