Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory
文献类型：期刊论文
| 作者 | Liu S(刘森); Lu ND(卢年端); Zhao XL(赵晓龙); Writam Banerjee; Lv HB(吕杭炳); Long SB(龙世兵) |
| 刊名 | Advanced Materials
 |
| 出版日期 | 2016-10-17 |
| 文献子类 | 期刊论文 |
| 英文摘要 | Cation-based resistive switching devices show promising applications in the memory and neuromorphic computing. Negative-SET behavior has been observed in various cation-based memories, but the underlying physical mechanism of this behavior remains unaddressed. Here, using transmission electron microscopy and energy dispersive spectrometer analysis, we directly observed that Ag filaments grow across the ZrO2 layer and penetrate into the Pt electrode in the Ag/ZrO2/Pt device. |
| 源URL | [http://159.226.55.106/handle/172511/16231]  |
| 专题 | 微电子研究所_微电子器件与集成技术重点实验室 |
| 推荐引用方式 GB/T 7714 | Liu S,Lu ND,Zhao XL,et al. Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory[J]. Advanced Materials,2016. |
| APA | 刘森,卢年端,赵晓龙,Writam Banerjee,吕杭炳,&龙世兵.(2016).Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory.Advanced Materials. |
| MLA | 刘森,et al."Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory".Advanced Materials (2016). |
入库方式： OAI收割
来源：微电子研究所
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