Study of total ionizing dose induced read bit errors in magneto-resistive
文献类型：期刊论文
| 作者 | Hu HY(呼红阳) ; Zhang HH(张浩浩); Li J(李金); Ji LL(季兰龙)
|
| 刊名 | Microelectronics Reliability
 |
| 出版日期 | 2016-10-21 |
| 文献子类 | 期刊论文 |
| 英文摘要 | This paper presents the Co-60 irradiation results for a 16 Mb Magneto-resistive Random Access Memory(MRAM). Read bit errors were observed during Total Ionizing Dose (TID) testing. We have investigated their physical mechanisms and proposed a resistance drift model of the access transistor in 1M1T (amagnetic tunnel junction and a transistor) storage structure to understand the phenomenon.Read operations have been simulated by HSPICE simulator with the magnetic tunnel junction (MTJ) compact model. |
| 源URL | [http://159.226.55.106/handle/172511/16245]  |
| 专题 | 微电子研究所_微电子器件与集成技术重点实验室 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Hu HY,Zhang HH,Li J,et al. Study of total ionizing dose induced read bit errors in magneto-resistive[J]. Microelectronics Reliability,2016. |
| APA | Hu HY,Zhang HH,Li J,&Ji LL.(2016).Study of total ionizing dose induced read bit errors in magneto-resistive.Microelectronics Reliability. |
| MLA | Hu HY,et al."Study of total ionizing dose induced read bit errors in magneto-resistive".Microelectronics Reliability (2016). |
入库方式： OAI收割
来源：微电子研究所
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