中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Unified percolation model for bipolaron-assisted organic magnetoresistance in the unipolar transport regime

文献类型:期刊论文

作者Gao N(高南); Lu ND(卢年端); Xie CQ(谢常青); Heinz Bassler
刊名Physical Review B
出版日期2016-08-04
文献子类期刊论文
英文摘要

The fact that in organic semiconductors the Hubbard energy is usually positive appears to be at variance with a bipolaron model to explain magnetoresistance (MR) in those systems. Employing percolation theory, we demonstrate that a moderately positive U is indeed compatible with the bipolaron concept for MR in unipolar current flow, provided that the system is energetically disordered, and the density of states (DOS) distribution is partially filled, so that the Fermi level overlaps with tail st

源URL[http://159.226.55.106/handle/172511/16246]  
专题微电子研究所_微电子器件与集成技术重点实验室
作者单位中国科学院微电子研究所
推荐引用方式
GB/T 7714
Gao N,Lu ND,Xie CQ,et al. Unified percolation model for bipolaron-assisted organic magnetoresistance in the unipolar transport regime[J]. Physical Review B,2016.
APA Gao N,Lu ND,Xie CQ,&Heinz Bassler.(2016).Unified percolation model for bipolaron-assisted organic magnetoresistance in the unipolar transport regime.Physical Review B.
MLA Gao N,et al."Unified percolation model for bipolaron-assisted organic magnetoresistance in the unipolar transport regime".Physical Review B (2016).

入库方式: OAI收割

来源:微电子研究所

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