Temperature, electric-field, and carrier-density dependence of hopping magnetoresistivity in disordered organic semiconductors
文献类型：期刊论文
| 作者 | Li L(李泠) ; Gao N(高南); Lu ND(卢年端); Liu M(刘明)
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| 刊名 | PHYSICAL REVIEW B
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| 出版日期 | 2017-10-31 |
| 文献子类 | 期刊论文 |
| 源URL | [http://159.226.55.106/handle/172511/18142]  |
| 专题 | 微电子研究所_微电子器件与集成技术重点实验室 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Li L,Gao N,Lu ND,et al. Temperature, electric-field, and carrier-density dependence of hopping magnetoresistivity in disordered organic semiconductors[J]. PHYSICAL REVIEW B,2017. |
| APA | Li L,Gao N,Lu ND,&Liu M.(2017).Temperature, electric-field, and carrier-density dependence of hopping magnetoresistivity in disordered organic semiconductors.PHYSICAL REVIEW B. |
| MLA | Li L,et al."Temperature, electric-field, and carrier-density dependence of hopping magnetoresistivity in disordered organic semiconductors".PHYSICAL REVIEW B (2017). |
入库方式： OAI收割
来源：微电子研究所
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