Schottky barrier diode based on beta-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics
文献类型：期刊论文
| 作者 | He QM(何启鸣); Dong H(董航); Long SB(龙世兵) ; Lv HB(吕杭炳); Liu Q(刘琦); Liu M(刘明)
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| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2017-03-01 |
| 文献子类 | 期刊论文 |
| 源URL | [http://159.226.55.106/handle/172511/18170]  |
| 专题 | 微电子研究所_微电子器件与集成技术重点实验室 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | He QM,Dong H,Long SB,et al. Schottky barrier diode based on beta-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics[J]. APPLIED PHYSICS LETTERS,2017. |
| APA | He QM,Dong H,Long SB,Lv HB,Liu Q,&Liu M.(2017).Schottky barrier diode based on beta-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics.APPLIED PHYSICS LETTERS. |
| MLA | He QM,et al."Schottky barrier diode based on beta-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics".APPLIED PHYSICS LETTERS (2017). |
入库方式： OAI收割
来源：微电子研究所
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