Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga2O3 Schottky diode via its temperature-dependent electrical properties
文献类型：期刊论文
| 作者 | Jian GZ(菅光忠); He QM(何启鸣); Dong H(董航); Tan Y(覃愿); Zhang Y(张颖); Xue HW(薛惠文); Long SB(龙世兵) ; Lv HB(吕杭炳); Liu Q(刘琦); Liu M(刘明)
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| 刊名 | AIP Advances
 |
| 出版日期 | 2017-12-15 |
| 文献子类 | 期刊论文 |
| 源URL | [http://159.226.55.106/handle/172511/18184]  |
| 专题 | 微电子研究所_微电子器件与集成技术重点实验室 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Jian GZ,He QM,Dong H,et al. Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga2O3 Schottky diode via its temperature-dependent electrical properties[J]. AIP Advances,2017. |
| APA | Jian GZ.,He QM.,Dong H.,Tan Y.,Zhang Y.,...&Liu M.(2017).Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga2O3 Schottky diode via its temperature-dependent electrical properties.AIP Advances. |
| MLA | Jian GZ,et al."Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga2O3 Schottky diode via its temperature-dependent electrical properties".AIP Advances (2017). |
入库方式： OAI收割
来源：微电子研究所
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