Uniformity and Retention Improvement of TaOx-Based Conductive Bridge Random Access Memory by CuSiN Interfacial Layer Engineering
文献类型：期刊论文
| 作者 | Gong TC(龚天成); Luo Q(罗庆) ; Xu XX(许晓欣); Yuan P(袁鹏); Chen CB(陈传兵); Liu Q(刘琦); Long SB(龙世兵); Lv HB(吕杭炳); Liu M(刘明)
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| 刊名 | IEEE ELECTRON DEVICE LETTERS
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| 出版日期 | 2017-08-02 |
| 文献子类 | 期刊论文 |
| 源URL | [http://159.226.55.106/handle/172511/18186]  |
| 专题 | 微电子研究所_微电子器件与集成技术重点实验室 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Gong TC,Luo Q,Xu XX,et al. Uniformity and Retention Improvement of TaOx-Based Conductive Bridge Random Access Memory by CuSiN Interfacial Layer Engineering[J]. IEEE ELECTRON DEVICE LETTERS,2017. |
| APA | Gong TC.,Luo Q.,Xu XX.,Yuan P.,Chen CB.,...&Liu M.(2017).Uniformity and Retention Improvement of TaOx-Based Conductive Bridge Random Access Memory by CuSiN Interfacial Layer Engineering.IEEE ELECTRON DEVICE LETTERS. |
| MLA | Gong TC,et al."Uniformity and Retention Improvement of TaOx-Based Conductive Bridge Random Access Memory by CuSiN Interfacial Layer Engineering".IEEE ELECTRON DEVICE LETTERS (2017). |
入库方式： OAI收割
来源：微电子研究所
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