Graphene Oxide Quantum Dots Based Memristors with Progressive Conduction Tuning for Artificial Synaptic Learning
文献类型：期刊论文
| 作者 | Xiaobing Yan; Lei zhang; Huawei Chen; XiaoYan Li; jingjuan Wang; Qi Liu; Chao Lu; JingSheng Chen; huaqiang Wu; Peng Zhou |
| 刊名 | Advanced Functional Materials
 |
| 出版日期 | 2018-05-30 |
| 文献子类 | 期刊论文 |
| 源URL | [http://159.226.55.107/handle/172511/18923]  |
| 专题 | 微电子研究所_微电子器件与集成技术重点实验室 |
| 推荐引用方式 GB/T 7714 | Xiaobing Yan,Lei zhang,Huawei Chen,et al. Graphene Oxide Quantum Dots Based Memristors with Progressive Conduction Tuning for Artificial Synaptic Learning[J]. Advanced Functional Materials,2018. |
| APA | Xiaobing Yan.,Lei zhang.,Huawei Chen.,XiaoYan Li.,jingjuan Wang.,...&Peng Zhou.(2018).Graphene Oxide Quantum Dots Based Memristors with Progressive Conduction Tuning for Artificial Synaptic Learning.Advanced Functional Materials. |
| MLA | Xiaobing Yan,et al."Graphene Oxide Quantum Dots Based Memristors with Progressive Conduction Tuning for Artificial Synaptic Learning".Advanced Functional Materials (2018). |
入库方式： OAI收割
来源：微电子研究所
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