Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects
文献类型：期刊论文
| 作者 | Zhao XL(赵晓龙); Liu Q(刘琦) ; Liu S(刘森); Niu JB(牛洁斌); Zhang XM(张续猛); Wang Y(王艳); Cao RR(曹荣荣); Wang W(王伟); Lv HB(吕杭炳); Long SB(龙世兵)
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| 刊名 | Advanced Materials
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| 出版日期 | 2018-02-13 |
| 文献子类 | 期刊论文 |
| 源URL | [http://159.226.55.107/handle/172511/18926]  |
| 专题 | 微电子研究所_微电子器件与集成技术重点实验室 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Zhao XL,Liu Q,Liu S,et al. Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects[J]. Advanced Materials,2018. |
| APA | Zhao XL.,Liu Q.,Liu S.,Niu JB.,Zhang XM.,...&Liu M.(2018).Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects.Advanced Materials. |
| MLA | Zhao XL,et al."Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects".Advanced Materials (2018). |
入库方式： OAI收割
来源：微电子研究所
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