Investigation of Retention Behavior of TiOx/Al2O3 Resistive Memory and Its Failure Mechanism Based on Meyer–Neldel Rule
文献类型：期刊论文
| 作者 | writam Banerjee; Lu ND(卢年端) ; Yang Y(杨阳); Li L(李泠); Lv HB(吕杭炳); Liu Q(刘琦); Long SB(龙世兵); Liu M(刘明)
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| 刊名 | IEEE TRANSACTIONS ON ELECTRON DEVICES
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| 出版日期 | 2018-01-15 |
| 文献子类 | 期刊论文 |
| 源URL | [http://159.226.55.107/handle/172511/18934]  |
| 专题 | 微电子研究所_微电子器件与集成技术重点实验室 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | writam Banerjee,Lu ND,Yang Y,et al. Investigation of Retention Behavior of TiOx/Al2O3 Resistive Memory and Its Failure Mechanism Based on Meyer–Neldel Rule[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2018. |
| APA | writam Banerjee.,卢年端.,杨阳.,李泠.,吕杭炳.,...&刘明.(2018).Investigation of Retention Behavior of TiOx/Al2O3 Resistive Memory and Its Failure Mechanism Based on Meyer–Neldel Rule.IEEE TRANSACTIONS ON ELECTRON DEVICES. |
| MLA | writam Banerjee,et al."Investigation of Retention Behavior of TiOx/Al2O3 Resistive Memory and Its Failure Mechanism Based on Meyer–Neldel Rule".IEEE TRANSACTIONS ON ELECTRON DEVICES (2018). |
入库方式： OAI收割
来源：微电子研究所
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