Atomic Scale Modulation of Self-Rectifying Resistive Switching by Interfacial Defects
文献类型：期刊论文
| 作者 | xing wu; kaihao yu; Dongkyu cha; Michel Bosman; Nagarajan Raghavan; xixiang zhang; KunLi; qiLiu; Litao Sun; Kinleong Pey |
| 刊名 | Advavced Science
 |
| 出版日期 | 2018-01-19 |
| 文献子类 | 期刊论文 |
| 源URL | [http://159.226.55.107/handle/172511/18936]  |
| 专题 | 微电子研究所_微电子器件与集成技术重点实验室 |
| 推荐引用方式 GB/T 7714 | xing wu,kaihao yu,Dongkyu cha,et al. Atomic Scale Modulation of Self-Rectifying Resistive Switching by Interfacial Defects[J]. Advavced Science,2018. |
| APA | xing wu.,kaihao yu.,Dongkyu cha.,Michel Bosman.,Nagarajan Raghavan.,...&Kinleong Pey.(2018).Atomic Scale Modulation of Self-Rectifying Resistive Switching by Interfacial Defects.Advavced Science. |
| MLA | xing wu,et al."Atomic Scale Modulation of Self-Rectifying Resistive Switching by Interfacial Defects".Advavced Science (2018). |
入库方式： OAI收割
来源：微电子研究所
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