Improvement of durability and switching speed by incorporating nanocrystals in the HfOx based resistive random access memory devices
文献类型：期刊论文
| 作者 | Wu QT(吴全潭); Writam Banerjee; Cao JC(曹劲琛); Ji ZY(姬濯宇) ; Li L(李泠); Liu M(刘明)
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| 刊名 | Applied Physics Letters
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| 出版日期 | 2018-07-12 |
| 文献子类 | 期刊论文 |
| 语种 | 英语 |
| 源URL | [http://159.226.55.107/handle/172511/18944]  |
| 专题 | 微电子研究所_微电子器件与集成技术重点实验室 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Wu QT,Writam Banerjee,Cao JC,et al. Improvement of durability and switching speed by incorporating nanocrystals in the HfOx based resistive random access memory devices[J]. Applied Physics Letters,2018. |
| APA | Wu QT,Writam Banerjee,Cao JC,Ji ZY,Li L,&Liu M.(2018).Improvement of durability and switching speed by incorporating nanocrystals in the HfOx based resistive random access memory devices.Applied Physics Letters. |
| MLA | Wu QT,et al."Improvement of durability and switching speed by incorporating nanocrystals in the HfOx based resistive random access memory devices".Applied Physics Letters (2018). |
入库方式： OAI收割
来源：微电子研究所
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