An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application
文献类型：期刊论文
| 作者 | Xue HW(薛惠文); He QM(何启鸣); Jian GZ(菅光忠); Long SB(龙世兵) ; Liu M(刘明)
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| 刊名 | Nanoscale Research Letters
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| 出版日期 | 2018-09-19 |
| 文献子类 | 期刊论文 |
| 源URL | [http://159.226.55.107/handle/172511/18967]  |
| 专题 | 微电子研究所_微电子器件与集成技术重点实验室 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Xue HW,He QM,Jian GZ,et al. An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application[J]. Nanoscale Research Letters,2018. |
| APA | Xue HW,He QM,Jian GZ,Long SB,&Liu M.(2018).An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application.Nanoscale Research Letters. |
| MLA | Xue HW,et al."An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application".Nanoscale Research Letters (2018). |
入库方式： OAI收割
来源：微电子研究所
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