Classification of Three-Level Random Telegraph Noise and Its Application in Accurate Extraction of Trap Profiles in Oxide-Based Resistive Switching Memory
文献类型：期刊论文
| 作者 | Gong TC(龚天成); Xu XX(许晓欣); Yu J(余杰); Dong DN(董大年); Lv HB(吕杭炳) |
| 刊名 | IEEE Electron Device Letters
 |
| 出版日期 | 2018-07-23 |
| 文献子类 | 期刊论文 |
| 源URL | [http://159.226.55.107/handle/172511/18968]  |
| 专题 | 微电子研究所_微电子器件与集成技术重点实验室 |
| 推荐引用方式 GB/T 7714 | Gong TC,Xu XX,Yu J,et al. Classification of Three-Level Random Telegraph Noise and Its Application in Accurate Extraction of Trap Profiles in Oxide-Based Resistive Switching Memory[J]. IEEE Electron Device Letters,2018. |
| APA | 龚天成,许晓欣,余杰,董大年,&吕杭炳.(2018).Classification of Three-Level Random Telegraph Noise and Its Application in Accurate Extraction of Trap Profiles in Oxide-Based Resistive Switching Memory.IEEE Electron Device Letters. |
| MLA | 龚天成,et al."Classification of Three-Level Random Telegraph Noise and Its Application in Accurate Extraction of Trap Profiles in Oxide-Based Resistive Switching Memory".IEEE Electron Device Letters (2018). |
入库方式： OAI收割
来源：微电子研究所
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