design of cmos compatible, high-speed, highly-stable complementary switching with multilevel operation in 3D vertically stacked novel HfO2/Al2O3/TiOx (HAT) RRAM
文献类型：期刊论文
| 作者 | Writam Banerjee; Zhang XM(张续猛); Luo Q(罗庆) ; Lv HB(吕杭炳); Liu Q(刘琦); Long SB(龙世兵); Liu M(刘明)
|
| 刊名 | advanced electronic materials
 |
| 出版日期 | 2018-01-08 |
| 文献子类 | 期刊论文 |
| 源URL | [http://159.226.55.107/handle/172511/18974]  |
| 专题 | 微电子研究所_微电子器件与集成技术重点实验室 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Writam Banerjee,Zhang XM,Luo Q,et al. design of cmos compatible, high-speed, highly-stable complementary switching with multilevel operation in 3D vertically stacked novel HfO2/Al2O3/TiOx (HAT) RRAM[J]. advanced electronic materials,2018. |
| APA | Writam Banerjee.,Zhang XM.,Luo Q.,Lv HB.,Liu Q.,...&Liu M.(2018).design of cmos compatible, high-speed, highly-stable complementary switching with multilevel operation in 3D vertically stacked novel HfO2/Al2O3/TiOx (HAT) RRAM.advanced electronic materials. |
| MLA | Writam Banerjee,et al."design of cmos compatible, high-speed, highly-stable complementary switching with multilevel operation in 3D vertically stacked novel HfO2/Al2O3/TiOx (HAT) RRAM".advanced electronic materials (2018). |
入库方式： OAI收割
来源：微电子研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。