Ultrathin GeOx Interfacial Repairer Formed by Thermal Oxidation for Germanium MOS Devices
文献类型：期刊论文
| 作者 | Wang SK(王盛凯); Xue BQ(薛百清); Han L(韩乐); Liu HG(刘洪刚) |
| 刊名 | Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials
 |
| 出版日期 | 2013-09-27 |
| 公开日期 | 2014-10-27 |
| 源URL | [http://10.10.10.126/handle/311049/11916]  |
| 专题 | 微电子研究所_高频高压器件与集成研发中心 |
| 通讯作者 | Liu HG(刘洪刚) |
| 推荐引用方式 GB/T 7714 | Wang SK,Xue BQ,Han L,et al. Ultrathin GeOx Interfacial Repairer Formed by Thermal Oxidation for Germanium MOS Devices[J]. Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials,2013. |
| APA | 王盛凯,薛百清,韩乐,&刘洪刚.(2013).Ultrathin GeOx Interfacial Repairer Formed by Thermal Oxidation for Germanium MOS Devices.Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials. |
| MLA | 王盛凯,et al."Ultrathin GeOx Interfacial Repairer Formed by Thermal Oxidation for Germanium MOS Devices".Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials (2013). |
入库方式： OAI收割
来源：微电子研究所
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