Fluorinated Al2O3 Gate Dielectric Engineering on GaSb MOS Devices
文献类型：期刊论文
| 作者 | Ceng ZH(曾振华); Sun B(孙兵); Liu HG(刘洪刚); Wang SK(王盛凯); Zhou JH(周佳辉); Yang X(杨旭); Chang HD(常虎东); Zhao W(赵威) |
| 刊名 | Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials, Tsukuba, 2014,
 |
| 出版日期 | 2014-09-16 |
| 公开日期 | 2015-04-16 |
| 源URL | [http://10.10.10.126/handle/311049/12554]  |
| 专题 | 微电子研究所_高频高压器件与集成研发中心 |
| 通讯作者 | Liu HG(刘洪刚) |
| 推荐引用方式 GB/T 7714 | Ceng ZH,Sun B,Liu HG,et al. Fluorinated Al2O3 Gate Dielectric Engineering on GaSb MOS Devices[J]. Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials, Tsukuba, 2014,,2014. |
| APA | 曾振华.,孙兵.,刘洪刚.,王盛凯.,周佳辉.,...&赵威.(2014).Fluorinated Al2O3 Gate Dielectric Engineering on GaSb MOS Devices.Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials, Tsukuba, 2014,. |
| MLA | 曾振华,et al."Fluorinated Al2O3 Gate Dielectric Engineering on GaSb MOS Devices".Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials, Tsukuba, 2014, (2014). |
入库方式： OAI收割
来源：微电子研究所
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