中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Reflectance and minority carrier lifetime of silicon nanoholes synthesized by chemical etching method

文献类型:期刊论文

作者Zhang DS(张代生); Ye TC(叶甜春); Liu XY(刘新宇); Jin Z(金智); Ding WC(丁武昌); Chen C(陈晨); Jia R(贾锐)
刊名Chemical Physics Letters
出版日期2014-04-05
语种英语
公开日期2015-04-17
源URL[http://10.10.10.126/handle/311049/12574]  
专题微电子研究所_高频高压器件与集成研发中心
通讯作者Jia R(贾锐)
作者单位中国科学院微电子研究所
推荐引用方式
GB/T 7714
Zhang DS,Ye TC,Liu XY,et al. Reflectance and minority carrier lifetime of silicon nanoholes synthesized by chemical etching method[J]. Chemical Physics Letters,2014.
APA Zhang DS.,Ye TC.,Liu XY.,Jin Z.,Ding WC.,...&Jia R.(2014).Reflectance and minority carrier lifetime of silicon nanoholes synthesized by chemical etching method.Chemical Physics Letters.
MLA Zhang DS,et al."Reflectance and minority carrier lifetime of silicon nanoholes synthesized by chemical etching method".Chemical Physics Letters (2014).

入库方式: OAI收割

来源:微电子研究所

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