Effect of source-gate spacing on direct current and radio frequency characteristic of graphene field effect transistor
文献类型：期刊论文
| 作者 | Yu GH(于广辉); Shi JY(史敬元) ; Zhang DY(张大勇); Ma P(麻芃); Jin Z(金智); Peng SA(彭松昂); Li M(李梅); Liu XY(刘新宇); Wang XY(王选芸); Wang SQ(王少青)
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| 刊名 | Applied Physics Letter
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| 出版日期 | 2015-01-21 |
| 公开日期 | 2016-05-26 |
| 源URL | [http://10.10.10.126/handle/311049/14933]  |
| 专题 | 微电子研究所_高频高压器件与集成研发中心 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Yu GH,Shi JY,Zhang DY,et al. Effect of source-gate spacing on direct current and radio frequency characteristic of graphene field effect transistor[J]. Applied Physics Letter,2015. |
| APA | Yu GH.,Shi JY.,Zhang DY.,Ma P.,Jin Z.,...&Wang SQ.(2015).Effect of source-gate spacing on direct current and radio frequency characteristic of graphene field effect transistor.Applied Physics Letter. |
| MLA | Yu GH,et al."Effect of source-gate spacing on direct current and radio frequency characteristic of graphene field effect transistor".Applied Physics Letter (2015). |
入库方式： OAI收割
来源：微电子研究所
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