Optimized power simulation of AlGaN/GaN HEMT for continuous wave and pulse applications
文献类型：期刊论文
| 作者 | Pang L(庞磊); Wang XH(王鑫华) ; Huang S(黄森); Liu GG(刘果果); Yuan TT(袁婷婷); Liu XY(刘新宇); Lin TY(林体元)
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| 刊名 | Journal of Semiconductors
 |
| 出版日期 | 2015-03-10 |
| 英文摘要 | An optimized modeling method of 8 × 100 μm AlGaN/GaN-based high electron mobility transistor (HEMT) for accurate continuous wave (CW) and pulsed power simulations is proposed. Since the self-heating effect can occur during the continuous operation, the power gain from the continuous operation significantly decreases when compared to a pulsed power operation. This paper extracts power performances of different device models from different quiescent biases of pulsed current-voltage (I-V). |
| 公开日期 | 2016-05-26 |
| 源URL | [http://10.10.10.126/handle/311049/14935]  |
| 专题 | 微电子研究所_高频高压器件与集成研发中心 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Pang L,Wang XH,Huang S,et al. Optimized power simulation of AlGaN/GaN HEMT for continuous wave and pulse applications[J]. Journal of Semiconductors,2015. |
| APA | Pang L.,Wang XH.,Huang S.,Liu GG.,Yuan TT.,...&Lin TY.(2015).Optimized power simulation of AlGaN/GaN HEMT for continuous wave and pulse applications.Journal of Semiconductors. |
| MLA | Pang L,et al."Optimized power simulation of AlGaN/GaN HEMT for continuous wave and pulse applications".Journal of Semiconductors (2015). |
入库方式： OAI收割
来源：微电子研究所
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