An Investigation of Capacitance-Voltage Hysteresis in Al2O3/SiC MIS Capacitors
文献类型：期刊论文
| 作者 | Shen HJ(申华军) ; Wang YY(王弋宇); Wang XL(王晓磊); Wu J(吴佳); Li CZ(李诚瞻); Han LC(韩林超); Wang WW(王文武); Liu XY(刘新宇)
|
| 刊名 | Materials Science Forum
 |
| 出版日期 | 2015-06-30 |
| 英文摘要 | Charge trapping behavior in Al2O3/SiC MOS structures was investigated by C-V hysteresis measurements in combination with XPS analysis. According to the quadratic fit of C-V hysteresis vs. tox curves, the density of the injected charges in the bulk Al2O3 films are the same under different maximum electric field, while the density of sheet charges increase with the increase of maximum electric field. Thus, a simple sheet charge model has been used to evaluate the actual effect of the electron inje |
| 公开日期 | 2016-05-26 |
| 源URL | [http://10.10.10.126/handle/311049/14967]  |
| 专题 | 微电子研究所_高频高压器件与集成研发中心 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Shen HJ,Wang YY,Wang XL,et al. An Investigation of Capacitance-Voltage Hysteresis in Al2O3/SiC MIS Capacitors[J]. Materials Science Forum,2015. |
| APA | Shen HJ.,Wang YY.,Wang XL.,Wu J.,Li CZ.,...&Liu XY.(2015).An Investigation of Capacitance-Voltage Hysteresis in Al2O3/SiC MIS Capacitors.Materials Science Forum. |
| MLA | Shen HJ,et al."An Investigation of Capacitance-Voltage Hysteresis in Al2O3/SiC MIS Capacitors".Materials Science Forum (2015). |
入库方式： OAI收割
来源：微电子研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。