Investigation of the Interface Quality and Reliability of 4H-SiC MOS Structure with NO and Forming Gas Annealing Treatment
文献类型：期刊论文
| 作者 | Wang YY(王弋宇); Peng CY(彭朝阳); Bai Y(白云) ; Tang YD(汤益丹); Wu J(吴佳); Li CZ(李诚瞻); Liu KA(刘可安); Liu XY(刘新宇)
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| 刊名 | Materials Science Forum
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| 出版日期 | 2016-05-24 |
| 文献子类 | 期刊论文 |
| 源URL | [http://159.226.55.106/handle/172511/16142]  |
| 专题 | 微电子研究所_高频高压器件与集成研发中心 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Wang YY,Peng CY,Bai Y,et al. Investigation of the Interface Quality and Reliability of 4H-SiC MOS Structure with NO and Forming Gas Annealing Treatment[J]. Materials Science Forum,2016. |
| APA | Wang YY.,Peng CY.,Bai Y.,Tang YD.,Wu J.,...&Liu XY.(2016).Investigation of the Interface Quality and Reliability of 4H-SiC MOS Structure with NO and Forming Gas Annealing Treatment.Materials Science Forum. |
| MLA | Wang YY,et al."Investigation of the Interface Quality and Reliability of 4H-SiC MOS Structure with NO and Forming Gas Annealing Treatment".Materials Science Forum (2016). |
入库方式： OAI收割
来源：微电子研究所
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