中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Intrinsic carrier mobility extraction based on a new quasi-analytical model for graphene field-effect transistor

文献类型:期刊论文

作者Zhang DY(张大勇); Shi JY(史敬元); Wang SQ(王少青); MUHAMMAD ASIF; Peng SA(彭松昂); Huang XN(黄昕楠)
刊名Journal of Physics D: Applied Physics
出版日期2016-09-22
文献子类期刊论文
英文摘要

The most common method of mobility extraction for graphene field-effect transistors is proposed by Kim. Kim's method assumes a constant mobility independent of carrier density and gets the mobility by fitting the transfer curves. However, carrier mobility changes with the carrier density, leading to the inaccuracy of Kim's method. In our paper, a new and more accurate method is proposed to extract mobility by fitting the output curves at a constant gate voltage. The output curves are fitted usin

源URL[http://159.226.55.106/handle/172511/16144]  
专题微电子研究所_高频高压器件与集成研发中心
作者单位中国科学院微电子研究所
推荐引用方式
GB/T 7714
Zhang DY,Shi JY,Wang SQ,et al. Intrinsic carrier mobility extraction based on a new quasi-analytical model for graphene field-effect transistor[J]. Journal of Physics D: Applied Physics,2016.
APA Zhang DY,Shi JY,Wang SQ,MUHAMMAD ASIF,Peng SA,&Huang XN.(2016).Intrinsic carrier mobility extraction based on a new quasi-analytical model for graphene field-effect transistor.Journal of Physics D: Applied Physics.
MLA Zhang DY,et al."Intrinsic carrier mobility extraction based on a new quasi-analytical model for graphene field-effect transistor".Journal of Physics D: Applied Physics (2016).

入库方式: OAI收割

来源:微电子研究所

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