Intrinsic carrier mobility extraction based on a new quasi-analytical model for graphene field-effect transistor
文献类型:期刊论文
作者 | Zhang DY(张大勇)![]() ![]() ![]() |
刊名 | Journal of Physics D: Applied Physics
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出版日期 | 2016-09-22 |
文献子类 | 期刊论文 |
英文摘要 | The most common method of mobility extraction for graphene field-effect transistors is proposed by Kim. Kim's method assumes a constant mobility independent of carrier density and gets the mobility by fitting the transfer curves. However, carrier mobility changes with the carrier density, leading to the inaccuracy of Kim's method. In our paper, a new and more accurate method is proposed to extract mobility by fitting the output curves at a constant gate voltage. The output curves are fitted usin |
源URL | [http://159.226.55.106/handle/172511/16144] ![]() |
专题 | 微电子研究所_高频高压器件与集成研发中心 |
作者单位 | 中国科学院微电子研究所 |
推荐引用方式 GB/T 7714 | Zhang DY,Shi JY,Wang SQ,et al. Intrinsic carrier mobility extraction based on a new quasi-analytical model for graphene field-effect transistor[J]. Journal of Physics D: Applied Physics,2016. |
APA | Zhang DY,Shi JY,Wang SQ,MUHAMMAD ASIF,Peng SA,&Huang XN.(2016).Intrinsic carrier mobility extraction based on a new quasi-analytical model for graphene field-effect transistor.Journal of Physics D: Applied Physics. |
MLA | Zhang DY,et al."Intrinsic carrier mobility extraction based on a new quasi-analytical model for graphene field-effect transistor".Journal of Physics D: Applied Physics (2016). |
入库方式: OAI收割
来源:微电子研究所
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