Ultra-thin 20 nm-PECVD-Si3N4 surface passivation in T-shaped gate InAlAs/InGaAs InP-based HEMTs and its impact on DC and RF performance
文献类型：期刊论文
| 作者 | Yang F(杨枫); Ding P(丁芃); Chen C(陈晨); Ding WC(丁武昌); Su YB(苏永波); Wang DH(王大海) |
| 刊名 | SOLID-STATE ELECTRONICS
 |
| 出版日期 | 2016-09-01 |
| 文献子类 | 期刊论文 |
| 英文摘要 | Surface passivation in InP-based High Electron Mobility Transistors (HEMTs) plays an important role in reducing or eliminating their surface effects which limit both direct-current (DC) and radio-frequency (RF) performances.S-parameter measurements demonstrate an increase in extracted fmax up to 450 GHz after passivation. The results show that, by using an ultra-thin Si3N4 surface passivation, its RF performance can be improved in InP-based HEMTs. |
| 源URL | [http://159.226.55.106/handle/172511/16147]  |
| 专题 | 微电子研究所_高频高压器件与集成研发中心 |
| 推荐引用方式 GB/T 7714 | Yang F,Ding P,Chen C,et al. Ultra-thin 20 nm-PECVD-Si3N4 surface passivation in T-shaped gate InAlAs/InGaAs InP-based HEMTs and its impact on DC and RF performance[J]. SOLID-STATE ELECTRONICS,2016. |
| APA | 杨枫,丁芃,陈晨,丁武昌,苏永波,&王大海.(2016).Ultra-thin 20 nm-PECVD-Si3N4 surface passivation in T-shaped gate InAlAs/InGaAs InP-based HEMTs and its impact on DC and RF performance.SOLID-STATE ELECTRONICS. |
| MLA | 杨枫,et al."Ultra-thin 20 nm-PECVD-Si3N4 surface passivation in T-shaped gate InAlAs/InGaAs InP-based HEMTs and its impact on DC and RF performance".SOLID-STATE ELECTRONICS (2016). |
入库方式： OAI收割
来源：微电子研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。