Studies on the polycrystalline silicon-SiO2 stack as front surface field for IBC solar cells by two-dimensional simulations
文献类型：期刊论文
| 作者 | Tao K(陶科); Hou CX(侯彩霞); Sun HC(孙恒超); Li YT(李勇滔); Jiang S(姜帅); Jia R(贾锐) |
| 刊名 | Chinese Physics B
 |
| 出版日期 | 2017-07-10 |
| 文献子类 | 期刊论文 |
| 源URL | [http://159.226.55.106/handle/172511/18006]  |
| 专题 | 微电子研究所_高频高压器件与集成研发中心 |
| 推荐引用方式 GB/T 7714 | Tao K,Hou CX,Sun HC,et al. Studies on the polycrystalline silicon-SiO2 stack as front surface field for IBC solar cells by two-dimensional simulations[J]. Chinese Physics B,2017. |
| APA | 陶科,侯彩霞,孙恒超,李勇滔,姜帅,&贾锐.(2017).Studies on the polycrystalline silicon-SiO2 stack as front surface field for IBC solar cells by two-dimensional simulations.Chinese Physics B. |
| MLA | 陶科,et al."Studies on the polycrystalline silicon-SiO2 stack as front surface field for IBC solar cells by two-dimensional simulations".Chinese Physics B (2017). |
入库方式： OAI收割
来源：微电子研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。