Carrier-Number-Fluctuation Induced Ultralow 1/f Noise Level in Top-Gated Graphene Field Effect Transistor
文献类型：期刊论文
| 作者 | Wang SQ(王少青); Yu GH(于广辉); Peng SA(彭松昂) ; Jin Z(金智); Zhang DY(张大勇); Shi JY(史敬元); Mao DC(毛达诚)
|
| 刊名 | ACS Applied Materials & Interfaces
 |
| 出版日期 | 2017-02-08 |
| 文献子类 | 期刊论文 |
| 源URL | [http://159.226.55.106/handle/172511/18007]  |
| 专题 | 微电子研究所_高频高压器件与集成研发中心 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Wang SQ,Yu GH,Peng SA,et al. Carrier-Number-Fluctuation Induced Ultralow 1/f Noise Level in Top-Gated Graphene Field Effect Transistor[J]. ACS Applied Materials & Interfaces,2017. |
| APA | Wang SQ.,Yu GH.,Peng SA.,Jin Z.,Zhang DY.,...&Mao DC.(2017).Carrier-Number-Fluctuation Induced Ultralow 1/f Noise Level in Top-Gated Graphene Field Effect Transistor.ACS Applied Materials & Interfaces. |
| MLA | Wang SQ,et al."Carrier-Number-Fluctuation Induced Ultralow 1/f Noise Level in Top-Gated Graphene Field Effect Transistor".ACS Applied Materials & Interfaces (2017). |
入库方式： OAI收割
来源：微电子研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。