A GaN-based power electronic device and a method for manufacturing the same is provided. The GaN-based power electronic device comprising a substrate and an epitaxial layer over the substrate. The epitaxial layer comprises a GaN-based heterostructure layer, a superlattice structure layer and a P-type cap layer. The superlattice structure layer is provided over the heterostructure layer, and the P-type cap layer is provided over the superlattice structure layer. By using this electronic device, gate voltage swing and safe gate voltage range of the GaN-based power electronic device manufactured on the basis of the P-type cap layer technique may be further extended, and dynamic characteristics of the device may be improved. Therefore, application process for the GaN-based power electronic device that is based on the P-type cap layer technique will be promoted.