Influence on curvature induced stress to the flatband voltage and interface density of 4H-SiC MOS structure
文献类型：期刊论文
| 作者 | Ling Sang; Hengyu Xu ; Caiping Wan; Jin-ping Ao
|
| 刊名 | Journal of Crystal Growth
 |
| 出版日期 | 2018-09-18 |
| 文献子类 | 期刊论文 |
| 源URL | [http://159.226.55.107/handle/172511/18980]  |
| 专题 | 微电子研究所_高频高压器件与集成研发中心 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Ling Sang,Hengyu Xu,Caiping Wan,et al. Influence on curvature induced stress to the flatband voltage and interface density of 4H-SiC MOS structure[J]. Journal of Crystal Growth,2018. |
| APA | Ling Sang,Hengyu Xu,Caiping Wan,&Jin-ping Ao.(2018).Influence on curvature induced stress to the flatband voltage and interface density of 4H-SiC MOS structure.Journal of Crystal Growth. |
| MLA | Ling Sang,et al."Influence on curvature induced stress to the flatband voltage and interface density of 4H-SiC MOS structure".Journal of Crystal Growth (2018). |
入库方式： OAI收割
来源：微电子研究所
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