Analysis of reverse leakage current mechanism of AlGaN/GaN HEMTs with N2 Plasma ssurface treatment
文献类型：期刊论文
| 作者 | Zhang ZJ(张宗敬); Liu H(刘辉); Luo WJ(罗卫军) |
| 刊名 | solid-state electronics
 |
| 出版日期 | 2018-03-07 |
| 文献子类 | 期刊论文 |
| 源URL | [http://159.226.55.107/handle/172511/18988]  |
| 专题 | 微电子研究所_高频高压器件与集成研发中心 |
| 推荐引用方式 GB/T 7714 | Zhang ZJ,Liu H,Luo WJ. Analysis of reverse leakage current mechanism of AlGaN/GaN HEMTs with N2 Plasma ssurface treatment[J]. solid-state electronics,2018. |
| APA | 张宗敬,刘辉,&罗卫军.(2018).Analysis of reverse leakage current mechanism of AlGaN/GaN HEMTs with N2 Plasma ssurface treatment.solid-state electronics. |
| MLA | 张宗敬,et al."Analysis of reverse leakage current mechanism of AlGaN/GaN HEMTs with N2 Plasma ssurface treatment".solid-state electronics (2018). |
入库方式： OAI收割
来源：微电子研究所
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