Thermal Analysis of AlGaN/GaN High-Electron-Mobility HEMT with Graphene
文献类型：期刊论文
| 作者 | Liu HG(刘洪刚) ; Jie Sun; Zhang GB(张国斌); Zhao M(赵妙); Chunli Yan; Sun B(孙兵); Wu ZG(吴宗刚); Chang HD(常虎东); Jin Z(金智)
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| 刊名 | Journal of nanoscience and nanotechnology
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| 出版日期 | 2018-11-30 |
| 文献子类 | 期刊论文 |
| 源URL | [http://159.226.55.107/handle/172511/18994]  |
| 专题 | 微电子研究所_高频高压器件与集成研发中心 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Liu HG,Jie Sun,Zhang GB,et al. Thermal Analysis of AlGaN/GaN High-Electron-Mobility HEMT with Graphene[J]. Journal of nanoscience and nanotechnology,2018. |
| APA | Liu HG.,Jie Sun.,Zhang GB.,Zhao M.,Chunli Yan.,...&Jin Z.(2018).Thermal Analysis of AlGaN/GaN High-Electron-Mobility HEMT with Graphene.Journal of nanoscience and nanotechnology. |
| MLA | Liu HG,et al."Thermal Analysis of AlGaN/GaN High-Electron-Mobility HEMT with Graphene".Journal of nanoscience and nanotechnology (2018). |
入库方式： OAI收割
来源：微电子研究所
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