Proton Irradiation Effect on InP-Based High Electron Mobility Transistor by Numerical Simulation with Non-Uniform Induced Acceptor-Like Defects
文献类型：期刊论文
| 作者 | Jin Z(金智) ; Shuxiang Sun; Mingming Chang; Chao Zhang; Chao Cheng; Yuxiao Li; Yinghui Zhong; Ding P(丁芃); Zhichao Wei
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| 刊名 | PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
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| 出版日期 | 2018-06-01 |
| 文献子类 | 期刊论文 |
| 源URL | [http://159.226.55.107/handle/172511/18995]  |
| 专题 | 微电子研究所_高频高压器件与集成研发中心 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Jin Z,Shuxiang Sun,Mingming Chang,et al. Proton Irradiation Effect on InP-Based High Electron Mobility Transistor by Numerical Simulation with Non-Uniform Induced Acceptor-Like Defects[J]. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS,2018. |
| APA | Jin Z.,Shuxiang Sun.,Mingming Chang.,Chao Zhang.,Chao Cheng.,...&Zhichao Wei.(2018).Proton Irradiation Effect on InP-Based High Electron Mobility Transistor by Numerical Simulation with Non-Uniform Induced Acceptor-Like Defects.PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS. |
| MLA | Jin Z,et al."Proton Irradiation Effect on InP-Based High Electron Mobility Transistor by Numerical Simulation with Non-Uniform Induced Acceptor-Like Defects".PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2018). |
入库方式： OAI收割
来源：微电子研究所
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